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Volumn 12, Issue 4, 1999, Pages 679-686

Optimization of a top-surface imaging process for 193-nm lithography

Author keywords

ArF lithography; Dry development; Line Edge Roughness; Linearity; Silylation; Top Surface Imaging

Indexed keywords


EID: 0000990894     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.12.679     Document Type: Article
Times cited : (4)

References (8)
  • 1
    • 0001369643 scopus 로고
    • Gas phase silylation in the diffusion enhanced silylation resist process for application to sub-0.5μm optical lithography
    • K. H. Baik, L. Van den Hove, A. M. Goethals, M. Op de Beeks, and B. Roland, "Gas phase silylation in the diffusion enhanced silylation resist process for application to sub-0.5μm optical lithography", J. Vac. Sci. & Tech., B8(6), 1481 (1990)
    • (1990) J. Vac. Sci. & Tech. , vol.B8 , Issue.6 , pp. 1481
    • Baik, K.H.1    Van Den Hove, L.2    Goethals, A.M.3    Op De Beeks, M.4    Roland, B.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.