-
1
-
-
0001369643
-
Gas phase silylation in the diffusion enhanced silylation resist process for application to sub-0.5μm optical lithography
-
K. H. Baik, L. Van den Hove, A. M. Goethals, M. Op de Beeks, and B. Roland, "Gas phase silylation in the diffusion enhanced silylation resist process for application to sub-0.5μm optical lithography", J. Vac. Sci. & Tech., B8(6), 1481 (1990)
-
(1990)
J. Vac. Sci. & Tech.
, vol.B8
, Issue.6
, pp. 1481
-
-
Baik, K.H.1
Van Den Hove, L.2
Goethals, A.M.3
Op De Beeks, M.4
Roland, B.5
-
2
-
-
0030314888
-
Top surface imaging and Optical Proximity Correction: A way to 0.18 μm lithography at 248nm
-
A. M. Goethals, J. Vertommen, F. Van Roey, A. Trichkov, K. Ronse, R. Jonckheere, and L. Van den hove, 'Top surface imaging and Optical Proximity Correction: A way to 0.18 μm lithography at 248nm", SPIE, Vol. 2726,362 (1996)
-
(1996)
SPIE
, vol.2726
, pp. 362
-
-
Goethals, A.M.1
Vertommen, J.2
Van Roey, F.3
Trichkov, A.4
Ronse, K.5
Jonckheere, R.6
Van Den Hove, L.7
-
3
-
-
11744386910
-
Reduction of line edge roughness in the top surface imaging process
-
S. Mori, T. Morisawa, N. Matsuzawa, Y. Kaimoto, M. Endo, T. Matsuo, K. Kuhara, and M. Sasago, "Reduction of line edge roughness in the top surface imaging process", J. Vac. Sci. Tech., B16(6), 3739 (1998)
-
(1998)
J. Vac. Sci. Tech.
, vol.B16
, Issue.6
, pp. 3739
-
-
Mori, S.1
Morisawa, T.2
Matsuzawa, N.3
Kaimoto, Y.4
Endo, M.5
Matsuo, T.6
Kuhara, K.7
Sasago, M.8
-
4
-
-
0001370606
-
Top Surface Imaging for Extreme Ultraviolet Lithography
-
C. Henderson, D. Wheeler, T. Pollagi, G Cardinale, D. O'Connell, A. Fisher, V. Rao, and J. Goldsmith, "Top Surface Imaging for Extreme Ultraviolet Lithography", J. Photopolymer Sci. & Tech. Vol. 11, 459 (1998)
-
(1998)
J. Photopolymer Sci. & Tech.
, vol.11
, pp. 459
-
-
Henderson, C.1
Wheeler, D.2
Pollagi, T.3
Cardinale, G.4
O'Connell, D.5
Fisher, A.6
Rao, V.7
Goldsmith, J.8
-
5
-
-
16844377450
-
Wet-silylation process for X-ray and EUV lithographies
-
H. Oizumi, Y. Yamashita, T. Ogawa, and M. Ohtani, "Wet-silylation process for X-ray and EUV lithographies", J. Photopolymer Sci. & Tech. Vol. 9, 627 (1996)
-
(1996)
J. Photopolymer Sci. & Tech.
, vol.9
, pp. 627
-
-
Oizumi, H.1
Yamashita, Y.2
Ogawa, T.3
Ohtani, M.4
-
7
-
-
84913155226
-
An Aqueous Base Developable Novel Deep-UV Resist for KrF Excimer Laser Lithography
-
M. Murata, E. Kobayashi, Y. Yumoto, T. Miura, and T. Yamaoka, "An Aqueous Base Developable Novel Deep-UV Resist for KrF Excimer Laser Lithography", J. Photopolymer Sci. & Tech. Vol. 4, 509 (1991)
-
(1991)
J. Photopolymer Sci. & Tech.
, vol.4
, pp. 509
-
-
Murata, M.1
Kobayashi, E.2
Yumoto, Y.3
Miura, T.4
Yamaoka, T.5
-
8
-
-
17144407807
-
Silylation for Carboxylic Acids
-
Y. Kaimoto, S. Mori, N. Matsuzawa, K. Kuhara, and M. Sasago, "Silylation for Carboxylic Acids", J. Photopolymer Sci. & Tech. Vol. 11, 633 (1998)
-
(1998)
J. Photopolymer Sci. & Tech.
, vol.11
, pp. 633
-
-
Kaimoto, Y.1
Mori, S.2
Matsuzawa, N.3
Kuhara, K.4
Sasago, M.5
|