High quality fluorinated silicon oxide films prepared by plasma enhanced chemical vapor deposition at 120 °C

Applied Physics Letters

Volumn 69, Issue 13, 1996, Pages 1876-1878

  Song, Juho ^a,b   Ajmera, P K ^a   Lee, G S ^a  

^a LOUISIANA STATE UNIVERSITY   (United States)

^b Dallas Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005077920     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117463     Document Type: Article

References (13)

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