The dependence of GaN growth rate on electron temperature in an ECR plasma

Surface and Coatings Technology

Volumn 131, Issue 1-3, 2000, Pages 470-473

  Pu, Yi Kang ^a   Ren, Yu Feng ^b   Yang, Si Ze ^b   Dywer, Daniel ^c   Zhang, Xiao Guang ^d   Jia, Xiou Jun ^d  

^a TSINGHUA UNIVERSITY   (China)

^b INSTITUTE OF PHYSICS   (China)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^d BEIJING INSTITUTE OF TECHNOLOGY   (China)

Author keywords

Electron temperature; GaN; Plasma assisted CVD

Indexed keywords

PLASMA TREATMENT;

EID: 0034536504     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(00)00842-2     Document Type: Conference Paper

References (22)