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Journal of Crystal Growth

Volumn 177, Issue 3-4, 1997, Pages 181-184

Low-temperature growth of GaN films on GaAs(1 0 0) substrates by hot plasma chemical vapor deposition

(5) Wang, Jie a Zhu, Ziqiang a Park, Ki Tae a Hiraga, Kenji a Yao, Takafumi a

a TOHOKU UNIVERSITY (Japan)

Author keywords

Chemical vapor deposition; GaN; High power radio frequency plasma

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; DISSOCIATION; LOW TEMPERATURE EFFECTS; NITRIDES; NITROGEN; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDES; HIGH POWER RADIO FREQUENCY PLASMA;

SEMICONDUCTING FILMS;

EID: 0031165653 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)01116-5 Document Type: Article

Times cited : (2)

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