Epitaxial growth of GaN with a high growth rate of 1.4 μm/h by RF-radical source molecular beam epitaxy

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 385-389

  Fujita, Nobuhiko ^a   Yoshizawa, Masaki ^a   Kushi, Kouichi ^a   Sasamoto, Hajime ^a   Kikuchi, Akihiko ^a   Kishino, Katsumi ^a  

^a SOPHIA UNIVERSITY   (Japan)

Author keywords

GaN; High growth rate; Molecular beam epitaxy; RF plasma source

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITRIDES; PHOTOLUMINESCENCE; PLASMA SOURCES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

BAND EDGE EMISSION; RADIOFREQUENCY RADICAL NITROGEN SOURCES;

SEMICONDUCTING FILMS;

EID: 0032094523     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00319-4     Document Type: Article

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