Theory of dislocations in diamond and silicon and their interaction with hydrogen

Journal of Physics Condensed Matter

Volumn 12, Issue 49, 2000, Pages 10263-10270

  Heggie, M I ^a   Jenkins, S ^a   Ewels, C P ^a   Jemmer P ^a   Jones, R ^b   Briddon, P R ^c  

^a UNIVERSITY OF SUSSEX   (United Kingdom)

^b UNIVERSITY OF EXETER   (United Kingdom)

^c NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; HYDROGEN; MATHEMATICAL MODELS; SEMICONDUCTING DIAMONDS; SEMICONDUCTING SILICON; SOLITONS;

ELASTIC STRAIN ENERGY; STRAINED BOND MODELS;

DISLOCATIONS (CRYSTALS);

EID: 0034515012     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/12/49/327     Document Type: Article

References (40)

1. Hornstra J 1958 J. Phys. Chem. Solids 5 129
2. Ray I L F and Cockayne D J H 1973 J. Microsc. 98 170
3. Hirsch P B 1979 J. Physique 40 C6 117 Hirsch P B 1980 J. Microsc. 118 3
4. Hirsch P B 1979 J. Physique 40 C6 117 Hirsch P B 1980 J. Microsc. 118 3
5. Jones R 1979 J. Physique 40 C6 33
6. Marklund S 1979 Phys. Status Solidi b 92 83
7. Batson P E 2000 Phys. Rev. B 61 16 633
8. Nunes R W, Bennetto J and Vanderbilt D 1998 Phys. Rev. B 57 10 388
9. Justo J F, de Koning M, Cai W and Bulatov V V 2000 Phys. Rev. Lett. 84 2172
10. Csanyi G, Ismail-Beigi S and Arias T A 1998 Phys. Rev. Lett. 80 3984
11. Lehto N and Öberg S 1997 Phys. Rev. Lett. 56 12 706
12. Valladares A, White J A and Sutton A P 1998 Phys. Rev. Lett. 81 4903
13. George A, Escaravage C, Champier G and Schröter W 1972 Phys. Status Solidi a 53 483
14. Jones R 1980 Phil. Mag. B 42 365
15. Wilshaw P R and Booker G R 1985 Microscopy of Semiconducting Materials 1985 (Inst. Phys. Conf. Ser. 76) (Bristol: Institute of Physics Publishing) p 329
16. Heggie M I and Jones R 1983 Phil. Mag. B 48 365 Heggie M I and Jones R 1983 Phil. Mag. B 48 379
17. Heggie M I and Jones R 1983 Phil. Mag. B 48 365 Heggie M I and Jones R 1983 Phil. Mag. B 48 379
18. Heggie M I 1982 PhD Thesis University of Exeter, UK
19. Hirth J P and Lothe J 1982 Theory of Dislocations (New York: Wiley) p 531
20. Yamashita Y, Jyobe F, Kamiura Y and Maeda K 1999 Phys. Status Solidi a 171 27
21. Beaufort M F, Garem H and Lépinoux J 1994 Phil. Mag. A 69 881
22. Ewels C P, Leoni S, Heggie M I, J̈emmer P, Hernandez E, Jones R and Briddon P R 2000 Phys. Rev. Lett. 84 690
23. Bruel M, Aspar B and Auberton Herve A J 1997 Japan. J. Appl. Phys. 36 1636
24. Conway N M J, Ferrari A C, Flewitt A J, Robertson J, Milne W I, Tagliaferro A and Beyer W 2000 Diamond Relat. Mater. 9 765
25. Hirsch P B 1985 Mater. Sci. Technol. 1 666
26. Pirouz P, Cockayne D J H, Sumida N, Hirsch P B and Lang A R 1983 Proc. R. Soc. A 386 241
27. Evans T and Sykes J 1974 Phil. Mag. 29 135
28. Öberg S, Sitch P K, Jones R and Heggie M I 1995 Phys. Rev. B 51 13 138
29. Jones R and Briddon P R 1998 Identification of Defects in Semiconductors (Semiconductors and Semimetals vol 51A) ed M Stavola (Boston, MA: Academic) ch 6, p 287
30. Sitch P K, Jones R, Öberg S and Heggie M I 1997 J. Physique III 7 1381
31. Wessel K and Alexander H 1977 Phil. Mag. 35 1523
32. Bennetto J, Nunes R W and Vanderbilt D 1997 Phys. Rev. Lett. 79 245
33. Lehto N and Öberg S 1998 Phys. Rev. Lett. 80 5568
34. Blase X, Lin K R, Canning A, Louie S G and Chrzan D C 2000 Phys. Rev. Lett. 84 5780
35. Nunes R W, Bennetto J and Vanderbilt D 1996 Phys. Rev. Lett. 77 1516
36. Jones R, Coomer B J, Goss J P, Hourahine B and Resende A 1999 Special Defects in Semiconducting Materials (Solid State Phenomena) (Zurich: Trans. Tech.)
37. Briddon P R and Jones R 1993 Physica B 185 179
38. Jenkins S and Heggie M I 2000 J. Phys.: Condens. Matter 12
39. Maeda K 2000 Private communication
40. Goss J 2000 Private communication