Cubic GaN films on GaAs (001) substrates without deep-level luminescence grown by metalorganic vapor phase epitaxy

Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 15-19

  Onabe, K ^a   Wu, J ^a   Katayama, R ^a   Zhao, F H ^a   Nagayama, A ^b   Shiraki, Y ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN RADIO CO LTD   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; LOW TEMPERATURE PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

BAND EDGE FREE EXCITON; DEEP LEVEL LUMINESCENCE; GALLIUM NITRIDE; THERMAL DAMAGE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034228610     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200007)180:1<15::AID-PSSA15>3.0.CO;2-B     Document Type: Article

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