Stimulated emission at 34 K from an optically pumped cubic GaN/AlGaN heterostructure grown by metalorganic vapor-phase epitaxy

Applied Physics Letters

Volumn 71, Issue 6, 1997, Pages 812-814

  Nakadaira, Atsushi ^a   Tanaka, Hidenao ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012731901     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119654     Document Type: Article

References (10)

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