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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1440-1442

Metalorganic vapor phase epitaxy growth of high quality cubic GaN on GaAs (100) substrates

(5) Wu, Jun a Yaguchi, Hiroyuki a Onabe, Kentaro a Shiraki, Yasuhiro b Ito, Ryoichi a

a UNIVERSITY OF TOKYO (Japan)

b UNIVERSITY OF TOKYO (Japan)

Author keywords

1,1 dimethylhydrazine (DMHy); Cubic GaN; High quality; MOVPE; Photoluminescence; X ray diffraction

Indexed keywords

EID: 0009207272 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.1440 Document Type: Article

Times cited : (31)

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