Lattice-matched InAsN(X = 0.38) on GaAs grown by molecular beam epitaxy

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 335-340

  Kao, Y C ^a   Broekaert, T P E ^a   Liu, H Y ^a   Tang, S ^a   Ho, I H ^a   Stringfellow, G B ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ENERGY GAP; FILM GROWTH; HALL EFFECT; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; NITRIDES; NITROGEN; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SINGLE CRYSTALS;

CRYSTAL QUALITY; LATTICE MATCHING;

SEMICONDUCTING FILMS;

EID: 0030385606     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-335     Document Type: Conference Paper

References (8)