Investigation of temperature-dependent performances of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistors

Semiconductor Science and Technology

Volumn 15, Issue 12, 2000, Pages 1101-1106

  Pan, Hsi Jen ^a   Wang, Wei Chou ^a   Thei, Kong Beng ^a   Cheng, Chin Chuan ^a   Yu, Kuo Hui ^a   Lin, Kun Wei ^a   Wu, Cheng Zu ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

CURRENT GAINS; HOLE INJECTION CURRENTS; QUATERNARY ALLOYS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034503986     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/12/301     Document Type: Article

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