Deep trap characterization of Al.48In.52As/In.52(Ga.7Al.3).48As heterostructures

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn , Issue , 1996, Pages 291-294

  Rezzoug, K ^a   Ducroquet, F ^a   Guillot, G ^a   Giraudet, L ^a   Praseuth, J P ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CONTAMINATION; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTIVITY OF SOLIDS; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS;

DEEP ELECTRON TRAPS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0030394255     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)