Influence of the δ-doping sheet and setback layer on the performance of an InGaP/GaAs heterojunction bipolar transistor

Semiconductor Science and Technology

Volumn 13, Issue 10, 1998, Pages 1187-1192

  Cheng, Shiou Ying ^a   Pan, Hsi Jen ^a   Shie, Yung Hsin ^a   Chen, Jing Yuh ^a   Chang, Wen Lung ^a   Wang, Wei Chou ^a   Lin, Po Hung ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

DOPING SHEET; SETBACK LAYERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032178870     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/10/022     Document Type: Article

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