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Volumn 69, Issue , 1999, Pages 203-208

X-ray diffraction studies of the influence of substitutional carbon on Si/Ge interdiffusion in SiGe/Si superlattices

a IHP (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; INTERDIFFUSION (SOLIDS); POINT DEFECTS; SEMICONDUCTOR DEVICE STRUCTURES; X RAY DIFFRACTION ANALYSIS;

SUBSTITUTIONAL CARBON;

SEMICONDUCTOR SUPERLATTICES;

EID: 0345072569 PISSN: 10120394 EISSN: None Source Type: Conference Proceeding
DOI: 10.4028/www.scientific.net/ssp.69-70.203 Document Type: Article

Times cited : (4)

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