SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium-Proceedings

Volumn 622, Issue , 2000, Pages T871-T877

The effects of post-oxidation anneal conditions on interface state density near the conduction band edge and inversion channel mobility for SiC MOSFETs

(8) Chung, G Y a Tin, C C a Williams, J R a McDonald, K b Di Ventra, M b Pantelides, S T b,c Feldman, L C b,c Weller, R A d

a AUBURN UNIVERSITY (United States)

b VANDERBILT UNIVERSITY (United States)

c OAK RIDGE NATIONAL LABORATORY (United States)

d VANDERBILT UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON MOBILITY; ENERGY GAP; FABRICATION; INTERFACES (MATERIALS); PASSIVATION; SILICON CARBIDE;

CONDUCTION BANDS;

MOSFET DEVICES;

EID: 0034430767 PISSN: 02729172 EISSN: None Source Type: Journal
DOI: 10.1557/proc-622-t8.7.1 Document Type: Article

Times cited : (3)

References (13)

1
- 0030268828
- (1996) Solid State Electronics , vol.30 , pp. 1409
- Casady, J.B.¹ Johnson, R.W.²

2
- 0031189326
- (1997) Phys. Stat. Sol. (A) , vol.162 , pp. 305
- Cooper, J.A.¹

3
- 0003597031
- Short Run Press, Exeter, England
- (1995) EMIS Data Reviews Series No. 13
- Harris, G.L.¹

4
- 0038642526
- (1999) IEEE Electron Device Lett. , vol.20 , pp. 241
- Schorner, R.¹ Friedrichs, P.² Peters, D.³ Stephani, D.⁴

5
- 0031188454
- (1997) Phys. Stat. Sol. (A) , vol.162 , pp. 321
- Afanasev, V.V.¹ Bassler, M.² Pensl, G.³ Schulz, M.⁴

6
- 85009934559
- to be published
- Proc. 2000 IEEE Aerospace Conf.
- Chung, G.Y.¹ Tin, C.C.² Won, J.H.³ Williams, J.R.⁴ McDonald, K.⁵ Weller, R.A.⁶ Pantelides, S.T.⁷ Feldman, L.C.⁸

7
- 0001136342
- (1996) J. Electronic Materials , vol.25 , Issue.5 , pp. 909
- Lipkin, L.A.¹ Palmour, J.W.²

8
- 0000397834
- (2000) Appl. Phys. Lett. , vol.76 , Issue.13 , pp. 1713
- Chung, G.Y.¹ Tin, C.C.² Williams, J.R.³ McDonald, K.⁴ Di Ventra, M.⁵ Pantelides, S.T.⁶ Feldman, L.C.⁷ Weller, R.A.⁸

9
- 0001587519
- (2000) Appl. Phys. Lett. , vol.76 , Issue.5 , pp. 568
- McDonald, K.¹ Haung, M.B.² Weller, R.A.³ Feldman, L.C.⁴ Williams, J.R.⁵ Stedile, F.C.⁶ Baumvol, I.J.R.⁷ Radtke, C.⁸

11
- 0014538642
- (1969) J. Electochem. Soc. , vol.116 , pp. 997
- Deal, B.E.¹ Mackenna, E.L.² Castro, P.L.³

12
- 0033097598
- (1999) IEEE Trans. Electron Devs. , vol.46 , Issue.3 , pp. 511
- Campi, J.¹ Shi, Y.² Luo, Y.³ Yan, F.⁴ Zhao, J.H.⁵

13
- 85009934554
- to be published
- Proc. 1999 Intl. Conf. on Silicon Carbide and Related Materials
- Suzuki, S.¹ Fuluda, K.² Okushi, H.³ Nagai, K.⁴ Sekigawa, T.⁵ Yoshida, S.⁶ Tanaka, T.⁷ Arai, K.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.