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Materials Research Society Symposium - Proceedings

Volumn 622, Issue , 2000, Pages

High room-temperature hole concentrations above 1019 cm-3 in Mg-doped InGaN/GaN superlattices

(3) Kumakura, K a Makimoto, T a Kobayashi, N a

a NTT Basic Research Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC CONDUCTIVITY; HOLE MOBILITY; METALLORGANIC VAPOR PHASE EPITAXY; PIEZOELECTRICITY; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES; THERMAL EFFECTS;

MOLE FRACTIONS;

GALLIUM NITRIDE;

EID: 0034429803 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-622-t5.11.1 Document Type: Conference Paper

Times cited : (5)

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