Characteristics of InxGa1 - xN/GaN grown by LPMOVPE with the variation of growth temperature

Journal of Crystal Growth

Volumn 182, Issue 1-2, 1997, Pages 6-10

  Lee, Cheul Ro ^a   Son, Sung Jin ^b   Lee, In Hwan ^c   Leem, Jae Young ^a   Noh, Sam Kyu ^a  

^a Korea Research Institute of Standards and Science   (South Korea)

^b OPTEL Semiconductor Corporation   (South Korea)

^c Korea University   (South Korea)

Author keywords

GaN

Indexed keywords

MICROSCOPIC EXAMINATION; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE; INDIUM NITRIDE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0031361352     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00317-5     Document Type: Article

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