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Journal of Crystal Growth

Volumn 197, Issue 1-2, 1999, Pages 78-83

Doping behavior of In0.1Ga0.9N codoped with Si and Zn

(5) Lee, Cheul Ro a Leem, Jae Young a Noh, Sam Kyu a Son, Sung Jin b Leem, Ki Young b

a Material Evaluation Center (South Korea)

b Chonbuk National University (South Korea)

Author keywords

Codoping; InGaN

Indexed keywords

CRYSTAL DEFECTS; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; ZINC;

INDIUM GALLIUM NITRIDE;

SEMICONDUCTOR GROWTH;

EID: 0033079331 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00940-3 Document Type: Article

Times cited : (7)

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