Critical dimension issues for 200 mm electron projection masks

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 12 B, 2000, Pages 6874-6880

  Resnick, Douglas J ^a   Nordquist, Kevin ^a   Dauksher, William J ^a   Ainley, Eric ^a   Lu, Bing ^b   Mangat, Pawitter ^b   Weisbrod, Eric ^c   Martin, Carl ^c   Chang, J ^c   Englestad, Roxann ^c   Lovell, Ed ^c   Ivin, Vladimir ^d  

^a MOTOROLA INC   (United States)

^b Semiconduct Prod Sector M   (United States)

^c University of Wisconsin Madison   (United States)

^d SOFT TEC   (Russian Federation)

Author keywords

Chemically amplified resist; Critical Dimension; Fogging; SCALPEL

Indexed keywords

DIES; ELECTRON SCATTERING; HEATING; MASKS; MATHEMATICAL MODELS; MONTE CARLO METHODS; PHOTORESISTS; SILICON WAFERS;

CRITICAL DIMENSIONS (CD); ELECTRON PROJECTION LITHOGRAPHY (EPL);

ELECTRON BEAM LITHOGRAPHY;

EID: 0034427842     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6874     Document Type: Article

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