Chrome on glass mask writing at 75 kV with the IBM EL4+electron-beam system

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 6, 1999, Pages 2932-2935

  Hartley, J G ^a   Groves, T R ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040114907     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590928     Document Type: Article

References (10)

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6. S. Babin, Proc. SPIE 3546, 389 (1998).
7. S. Asai et al., "The advantage in using the combination of HL-800M and CAR process," Photo Mask Japan '99 (to be published).
8. N. Kuwahara et al., "Preliminary evaluation of proximity and resist heating effects observed in high acceleration voltage e-beam writing for 180-nm-and-beyond rule reticle fabrication," Photo Mask Japan '99 (to be published).
9. H. Sakurai et al., "Resist heating effect on 50 keV EB mask writing," Photo Mask Japan '99 (to be published).
10. S. J. Wind, M. G. Rosenfield, G. Pepper, W. W. Molzen, and P. D. Gerber, J. Vac. Sci. Technol. B 7, 1507 (1989).