Reduction of long range fogging effect in a high acceleration voltage electron beam mask writing system

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 6, 1999, Pages 2936-2939

  Ogasawara, Munehiro ^a   Shimomura, Naoharu ^a   Takamatsu, Jun ^a   Yoshitake, Shusuke ^a   Ooki, Kenji ^a   Nakayamada, Noriaki ^a,b   Okabe, Humiyuki ^a   Tojo, Toru ^a   Takigawa, Tadahiro ^a  

^a TOSHIBA CORPORATION   (Japan)

^b Toshiba Machine Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040708662     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590927     Document Type: Article

References (5)

1. K. K. Christenson, R. V. Viswanathan, and F. J. Hohn, J. Vac. Sci. Technol. B 8, 1618 (1990).
2. N. Saitou, T. Iwasaki, and F. Murai, Proc. SPIE 1465, 185 (1991).
3. T. Tojo et al., Proc. SPIE 3748, 416 (1999).
4. N. Shimomura, M. Ogasawara, J. Takamatsu, S. Yoshitake, K. Ooki, N. Nakayamada, F. Okabe, and T. Tojo, Proc. SPIE 3748, 408 (1999).
5. S. Oogi, T. Ishimura, T. Kamikubo, M. Shimizu, Y. Hattori, T. Iijima, H. Anze, T. Abe, T. Tojo, and T. Takigawa, Jpn. J. Appl. Phys., Part 1 37, 6779 (1998).