Lightly nitrided N2O/O2 gate oxidation process for submicron complementary metal-oxide semiconductor technology

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 3, 1996, Pages 967-970

  Roy, P K ^a   Ma, Y ^a   Weinhoffer, M ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343316970     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580423     Document Type: Article

References (14)

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