Potential and modelling of 1μm 1GHz SOI CMOS OTAs

Electronics Letters

Volumn 33, Issue 9, 1997, Pages 774-775

  Eggermont, J P ^a   Flandre, D ^a   Raskin, J P ^a   Colinge, J P ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

CMOS integrated circuits; Operational transconductance amplifiers; Silicon on insulalor

Indexed keywords

BANDWIDTH; COMPUTER SIMULATION; ELECTRIC VARIABLES MEASUREMENT; MATHEMATICAL MODELS; MICROWAVES; OPERATIONAL AMPLIFIERS; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

GATE TO DRAIN CAPACITANCE; OPERATIONAL TRANSCONDUCTANCE AMPLIFIER; SOURCE DRAIN TO SUBSTRATE CAPACITANCE; TRANSCONDUCTANCE TO CURRENT RATIO;

CMOS INTEGRATED CIRCUITS;

EID: 0031123366     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970517     Document Type: Article

References (3)

1. FLANDRE, D., COLINGE, J.P., CHEN, J., DE CEUSTER, D., EGGERMONT, J.P., FERREIRA, L., GENTINNE, B., JESPERS, P.G.A., VIVIANI, A., GILLON, R., RASKIN, J.P., VANDER VORST, A., VANHOENACKER, D., and SILVEIRA, F.: 'Fully-depleted SOI CMOS technology for low-voltage low-power digital/analog/microwave circuits', Analog Int. Circuits Signal Process., (in press)
2. KOKOZINSKI, R., BARTHEL, W., BROCKHERDE, W., BUDDE. W., HOSTICKA, J., and ZIMMER, G.: 'Microwave wideband in bulk-CMOS and CMOS/SIMOX technologies'. IEEE Int. Solid-State Circuits Conf., San Francisco, 15-17 February 1995, Paper TP 11.2, pp. 188-189
3. EGGERMONT, J.P., DE CEUSTER, D., FLANDRE, D., GENTINNE, B., JESPERS, P., and COLINGE, J.P.: 'Design of SOI CMOS operational amplifiers for applications up to 300°C', IEEE J. Solid-State Circuits, 1996, 31, (2), pp. 179-186