On the validity of a new extrinsic equivalent circuit including noise of HEMTs required for millimeter wave circuit design

Annales des Telecommunications/Annals of Telecommunications

Volumn 52, Issue 3-4, 1997, Pages 140-144

  Dambrine, Gilles ^a   Belquin, Jean Maxence ^a   Danneville, François ^a   Cappy, Alain ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

Equivalent circuit; Microwave transistor; Millimetric wave; Noise factor; Noise source; Scattering repartition; Two dimensional electron gas transistor

Indexed keywords

EID: 0343050470     PISSN: 00034347     EISSN: 19589395     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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2. BERROTH (M.), BOSCH (R). Broad-band determination of the FET small-signal equivalent circuit. IEEE Trans. MTT (1990), 38, n° 7, pp. 891-895.
3. TASKER (P. J.), BRAUNSTEIN (J.). New MODFET small signal circuit model required for millimeter-wave MMIC design : extraction and validation to 120 GHz. IEEE MTT-S Digest (1995). pp. 661-614.
4. POSPIEZALSKI (M. W.). Modeling of noise parameter of MESFETS and MODFETS and their frequency and temperature dependence. IEEE Trans. MTT (1989), 37, n° 9, pp. 1340-1350.
5. MINASIAN (R. A.). Simplified GaAs MESFET model to 10 GHz. Electronics Letters (1977), 13, n° 18, pp. 549-551.
6. HAPPY (H.) and al. Helena : a friendly software for calculating the D.C., A.C., and noise performance of HEMTS. International journal of microwave and millimeter wave computer-aided engineering, John Wiley & Sons, Inc. (1995), 3, n° 1, pp. 14-28.
7. DAMBRINE (G.) and al. A new method for on-wafer noise measurement. IEEE Trans. MTT (1993), 41, n° 3, pp. 375-381.
8. res Journées franco-marocaines sur les microondes et leurs applications (1996), Inv 13-1.