Transport mechanisms of ions and neutrals in low-pressure, high-density plasma etching of high aspect ratio contact holes

Thin Solid Films

Volumn 374, Issue 2, 2000, Pages 190-207

  Nishikawa, K ^a   Ootera, H ^a   Tomohisa, S ^a   Oomori, T ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; COMPUTER SIMULATION; DEPOSITION; ELECTRON CYCLOTRON RESONANCE; MATHEMATICAL MODELS; PLASMA ETCHING; REACTIVE ION ETCHING; TRANSPORT PROPERTIES;

HIGH ASPECT RATIO CONTACT HOLES; HIGH-DENSITY PLASMA ETCHING; KNUDSEN TRANSPORT THEORY;

SEMICONDUCTING FILMS;

EID: 0034290960     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01151-2     Document Type: Article

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