Generation mechanisms of trapped charges in oxide layers of 6H-SiC MOS structures irradiated with gamma-rays

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1017-1020

  Yoshikawa, M ^a   Saitoh, K ^b,d   Ohshima, T ^a   Itoh, H ^a,e   Nashiyama, I ^a   Takahashi, Y ^b   Ohnishi, K ^b   Okumura, H ^c   Yoshida, S ^c  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b NIHON UNIVERSITY   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

^d HITACHI LTD   (Japan)

^e UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Bias Polarity; Depth Profile; Gamma Rays; Irradiation; MOS Structure; Oxide Trapped Charges

Indexed keywords

ELECTRIC CHARGE; ELECTRODES; GAMMA RAYS; MOS DEVICES; OXIDES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

BIAS POLARITY;

CAPACITORS;

EID: 11644305370     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1017     Document Type: Article

References (4)

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