Effect of oxygen-to-argon ratio on the electrical and reliability characteristics of sputtered Sr0.8Bi2.5Ta1.2Nb0.9O9+x thin films

Thin Solid Films

Volumn 372, Issue 1, 2000, Pages 190-199

  Tsai, M S ^a   Tseng, T Y ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; FERROELECTRIC MATERIALS; IRIDIUM; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; PERMITTIVITY; SILICA; SILICON; SUBSTRATES;

STRONTIUM BISMUTH TANTALUM NIOBATE;

DIELECTRIC FILMS;

EID: 0034274272     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01057-9     Document Type: Article

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