Thin films of layered-structure (1 - X)SrBi2Ta2O9-XBi3Ti(Ta1-yNb y)O9 solid solution for ferroelectric random access memory devices

Applied Physics Letters

Volumn 71, Issue 8, 1997, Pages 1041-1043

  Desu, S B ^a   Joshi, P C ^a   Zhang, X ^a   Ryu, S O ^a  

^a State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342680519     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119721     Document Type: Article

References (11)

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