Effect of annealing method to crystalize on Sr0.9Bi2.3Ta2O9+α thin film properties formed from alkoxide solution

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 1, 1998, Pages 192-197

  Koiwa, Ichiro ^a   Tani, Kouichi ^a   Mita, Juro ^a   Iwabuchi, Toshiyuki ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

Effect of annealing method to crystallize; Ferroelectric thin film; Microstructure; Sr0.9Bi2.3Ta2O9+ (SBT); TEM observation

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; CURRENT DENSITY; FERROELECTRIC MATERIALS; GRAIN BOUNDARIES; LEAKAGE CURRENTS; POLARIZATION; STRONTIUM COMPOUNDS; THERMAL EFFECTS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ALKOXIDE; REMANENT POLARIZATION; SATURATION POLARIZATION;

DIELECTRIC FILMS;

EID: 0031646495     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.37.192     Document Type: Article

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