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Volumn 29, Issue 9, 2000, Pages

Electron and hole traps in GaN p-i-n photodetectors grown by reactive molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRON TRAPS; HOLE TRAPS; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; THREE TERM CONTROL SYSTEMS;

EID: 0034273726     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0274-8     Document Type: Article
Times cited : (9)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.