Electrical characterization of Mg-related energy levels and the compensation mechanism in GaN : Mg

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 46-49

  Seghier, D ^a   Gislason, H P ^a  

^a UNIVERSITY OF ICELAND   (Iceland)

Author keywords

GaN; Hydrogen; Mg; Passivation

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRIC CONDUCTANCE; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRAPS; HOLE TRAPS; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0033314701     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00403-2     Document Type: Article

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