Velocity sources as an explanation for experimentally observed variations in Si{111} etch rates

Journal of Micromechanics and Microengineering

Volumn 9, Issue 2, 1999, Pages 135-138

  Nijdam, A J ^a   Berenschot, J W ^a   Van Suchtelen, J ^a,b   Gardeniers, J G E ^a   Elwenspoek, M ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b RIM   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BOUNDARY CONDITIONS; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; ETCHING; SILICON NITRIDE; SILICON WAFERS;

ETCH RATE RATIO; KINETIC BOUNDARY CONDITIONS; VELOCITY SOURCES; WET CHEMICAL ETCHING;

MICROELECTRONIC PROCESSING;

EID: 0033138337     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/9/2/008     Document Type: Article

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