High-density nanoetchpit-array fabrication on Si surface using ultrathin SiO2 mask

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 9 A, 2000, Pages 5352-5355

  Koh, Meishoku ^a   Sawara, Souichi ^b   Goto, Tomomi ^b   Ando, Yoshinori ^b   Shinada, Takahiro ^b   Ohdomari, Iwao ^a,b  

^a WASEDA UNIVERSITY   (Japan)

^b School of Science and Engineering   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON SCATTERING; ETCHING; MASKS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILICA;

NANOETCHPIT ARRAYS;

NANOTECHNOLOGY;

EID: 0034264657     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.5352     Document Type: Article

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