Hetero-micromachining of epitaxial III/V compound semiconductors

Sensors and Actuators, A: Physical

Volumn 85, Issue 1, 2000, Pages 324-329

  Peiner, Erwin ^a   Fricke, Klaus ^a   Behrens, Ingo ^a   Bakin, Andrey ^a   Schlachetzki, Andreas ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTUATORS; CANTILEVER BEAMS; EPITAXIAL GROWTH; ETCHING; FABRICATION; FRACTURE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR MATERIALS; SENSORS; SILICON; THERMAL EFFECTS;

HETERO-MICROMACHINING; THERMALLY ACTUATED MICROMIRRORS;

MICROMACHINING;

EID: 0034248842     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(00)00318-6     Document Type: Article

References (14)

1. French P.J., Gennissen P.T.J., Sarro P.M. New silicon micromachining techniques for microsystems. Sens. Actuators, A. 62:1997;652-662.
2. Fricke K., Peiner E., Chahoud M., Schlachetzki A. Fracture properties of epitaxial InP microcantilevers. Proc. Eurosensors XII, IOP, Bristol. 1998;723-726.
3. Fricke K., Peiner E., Chahoud M., Schlachetzki A. Fracture properties of InP microcantilevers, by hetero-micromachining. Sens. Actuators. 76:1999;395-402.
4. Hjort K., Söderkvist J., Schweitz J.-Å. Gallium arsenide as a mechanical material. J. Micromech. Microeng. 4:1994;1-13.
5. Peiner E., Mo S., Iber H., Tang G.-P., Schlachetzki A. Characterization on thin buffer layers for strongly mismatched heteroepitaxy. Thin Solid Films. 283:1996;226-229.
6. 0.47As on exactly (001)-oriented Si grown by metal-organic vapour-phase epitaxy. J. Cryst. Growth. 172:1997;44-52.
7. Chu S.N.G., Nakahara S., Pearton S.J., Boone T., Vernon S.M. Antiphase domains in GaAs grown by metalorganic chemical vapour deposition on silicon-on-insulator. J. Appl. Phys. 64:1988;2981-2989.
8. Bartels A., Peiner E., Klockenbrink R., Schlachetzki A. The distribution of charge concentration in InP/Si. J. Appl. Phys. 78:1995;224-228.
9. 0 photoreflectance spectra on GaAs/Si and InP/Si heterostructures. Phys. Status Solidi A. 152:1995;133-146.
10. Wilson C.J., Omeggi A., Narbutovskih M. Fracture testing of silicon microcantilever beams. J. Appl. Phys. 79:1996;2386-2393.
11. Furness T.A. III Where there is no vision... Proc. Eurosensors XII, Southampton, 13-16 September:1998;30-49. Plenary Paper 1.1.4.
12. Lang W., Pavlicek H., Marx Th., Scheithauer H., Schmitt B. Electrostatically actuated micromirror devices in silicon technology. Sens. Actuators. 74:1999;216-218.
13. Schroth A., Lee C., Matsumoto S., Maeda R. Application of sol-gel deposited thin PZT film for actuation of 1D and 2D scanners. Sens. Actuators. 73:1999;144-152.
14. Ferreira L.O.S., Moehlecke S. A silicon micromechanical galvanometric scanner. Sens. Actuators. 73:1999;252-260.