Characterization of thin buffer layers for strongly mismatched heteroepitaxy

Thin Solid Films

Volumn 283, Issue 1-2, 1996, Pages 226-229

  Peiner, E ^a   Mo, S ^a   Iber, H ^a   Tang, G P ^a   Schlachetzki, A ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

Ellipsometry; Epitaxy; Heterostructures; Scanning electron microscopy (SEM)

Indexed keywords

CRYSTAL DEFECTS; DENSITY (OPTICAL); ELLIPSOMETRY; EPITAXIAL GROWTH; HETEROJUNCTIONS; LIGHT ABSORPTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; THICKNESS MEASUREMENT; X RAY SPECTROSCOPY;

ELECTRON CHANNELING PATTERNS; ENERGY DISPERSIVE X RAY SPECTROMETRY; MECHANICAL SURFACE TRACING; MISMATCHED HETEROEPITAXY; THIN BUFFER LAYERS;

THIN FILMS;

EID: 0030231492     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08505-X     Document Type: Article

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