Low-frequency noise in AlInAs/InGaAs/InP MBE- and MOCVD-grown HFETs

Semiconductor Science and Technology

Volumn 15, Issue 8, 2000, Pages 799-805

  Sakalas, P ^a,b   Nawaz, M ^b   Zirath, H ^b,c  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c Ericsson Microwave Systems AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRON TRAPS; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFET);

GATES (TRANSISTOR);

EID: 0034246029     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/8/303     Document Type: Article

References (23)

1. Mishra U K, Brown A S, Jelloian L M, Thompson M, Nguyen L D and Rosenbaum S E 1989 Novel high performance self-aligned 0.15 μm micron long T-gate AlInAs-GaInAs HEMTs IEDM Tech. Digest 101-4
2. 1-xAs (x > 0.53) IEEE Trans. Electron Devices 36 2249-59
3. 1-x As HEMTs IEEE Trans. Electron Devices 39 523-31
4. Thurairaj M S, Das M B, Ballingall J M, Ho P, Chao P C and Kao M Y 1991 Low frequency noise behaviour of 0.15 μm gate-length lattice-matched and lattice-mismatched MODFETs on InP IEEE Electron Device Lett. 12 410-2
5. Viktorovitch P, Rojo-Romeo P, Leclercq J L, Letartre X, Tardy J, Oustric M and Gendry M 1996 Low frequency noise sources in InAlAs/InGaAs MODFETs IEEE Trans. Electron Devices 43 2085-100
6. Rojo-Romeo P, Viktorovitch P, Letartre X and Tardy J 1995 A comparative study of the low frequency noise in InP based heterojunction field effect transistors (HFETs) IPRM'95: Proc. 7th Int. Conf. on InP and Related Materials (Sapporo, 1995) pp 385-8
7. Sommer V, Kohl A, Weigel K, Mesguida Kusters A and Heime K 1994 Low-frequency noise phenomena in InP-based HFETs related to stress induced degeneration and interface properties IPRM'94: Proc. 6th Int. Conf. on InP and Related Materials (Santa Barbara, CA) pp 857-60
8. Sommer V, Albert P B, Zerbe T, Schnell A, Kusters A and Heime K 1994 Characterization of hetero interfaces in InP/In75Ga25As/InP HFETs by means of digital signal processing of measured low frequency noise spectra IPRM'94: Proc. 6th Int. Conf. on InP and Related Materials (Santa Barbara, CA) pp 415-8
9. McWhorter A 1957 1/f noise and germanium surface properties Semiconductor Surface Physics ed R H Kingston (University of Pennsylvania Press) p 507
10. Hooge F N 1991 1/f noise in semiconductors Proc. Noise in Physical Systems and 1/f Fluctuations ed T Musha, S Sato and M Yamamoto pp 7-14
11. Berntgen J, Heime K, Daumann W, Auer U, Tegude F J and Matulioniz A 1999 The 1/f noise of InP based 2DEG devices and its dependence on mobility IEEE Trans. Electron Devices 46 194-202
12. Peransin J M, Vigaud P, Rigaud D and Vandamme L K J 1990 1/f noise in MODFETs at low drain bias IEEE Trans. Electron Devices 37 2250-3
13. Nawaz M, Strupinski W, Stenarson J, Person S H M and Zirath H 1999 Reliability evaluation of MOCVD grown AlInAs/InGaAs/InP HEMTs Proc. 37th Annu. Int. Reliability Physics Symp. (San Diego, CA) pp 103-9
14. Nawaz M, Persson M, Choumas E, Garcia M, Angelov I, Kolberg E L and Zirath H 1998 Q-band and W-band MMICs based on a microstrip InP HEMT-technology Proc. ESA Workshop (Helsinki) pp 406-11
15. Mounib A, Balestra F, Mathieu N, Brini J, Ghibaudo G, Chovet A, Chantre A and Nouailhat A 1995 Low-frequency noise sources in polysilicon emitter BJTs: influence of hot-electron_degradation and post-stress recovery IEEE Trans. Electron Devices 43 1647-52
16. Llinares P, Celi D, Roux-dit-Buisson O, Ghibaudo G and Chroboczek J A 1997 Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors J. Appl. Phys. 82 2671-5
17. Souifi A, Georgescu B, Bremond G, Py M A, Decobert J, Post G and Guillot G 1999 Influence of deep levels in AlInAs/GaInAs/InP HFETS IPRM'99: Proc. 11th Int. Conf. on Indium Phosphide and Related Materials (Davos) pp 487-90
18. Duran H C, Ren L, Beck M, Py M A, Ilegems M and Bächtold W 1996 Low-frequency noise properties of selectively dry etched InP HEMTs IEEE Trans. Electron Devices 45 1219-25
19. Reimbold G 1996 Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion - influence of interface states IEEE Trans. Microwave Theory Tech. 44 432-7
20. Ghibaudo G, Roux O, Nguyen-Duc C, Balestra F and Brini J 1991 Phys. Status Solidi A 124 571
21. Garcia M, Yhland K, Zirath H and Angelov I 1997 Fast automatic and accurate HFET small-signal characterization Microwave J. 102-17
22. Rorsman N, Garcia M, Karlsson C and Zirath H 1999 Accurate small-signal modelling of HFET's for millimeter-wave applications IEEE Trans. Electron Devices 46 6 1099-103
23. Surya W Y, Tong K Y, Wook Kim, Andrei E Botcharev and Morcoc H 1999 Characterization of flicker noise in GaN-based MODFETs at low drain bias IEEE Trans. Electron Devices 46 1099-103