Influence of deep levels in AlInAs/GaInAs/InP HFETs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1999, Pages 487-490

  Souifi, A ^a   Georgescu, B ^a   Bremond, G ^a   Py, M A ^a   Decobert, J ^a   Post, G ^a   Guillot, G ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; HETEROJUNCTIONS; HOLE TRAPS; OPTICAL CORRELATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSCONDUCTANCE;

CURRENT TRANSIENT SPECTROSCOPY (CTS); DEEP LEVELS; DRAIN LAGS; LOW FREQUENCY NOISE (LFN); MONOCHROMATIC OPTICAL EXCITATIONS;

FIELD EFFECT TRANSISTORS;

EID: 0032671761     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)