Fabrication and characterization of artificial crystal originated particles

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 12 B, 1999, Pages

  Bearda, Twan ^a   Mertens, Paul W ^a   Heyns, Marc M ^a   Schmolke, Rüdiger ^a,b  

^a IMEC   (Belgium)

^b SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; ETCHING; GATES (TRANSISTOR); MOS DEVICES;

CRYSTAL ORIGINATED PARTICLES; FOWLER-NORDHEIM TUNNELING; OXIDE THINNING;

SILICON WAFERS;

EID: 0033350236     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l1509     Document Type: Article

References (15)