Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides

Electrochemical and Solid-State Letters

Volumn 3, Issue 2, 2000, Pages 103-105

  Chen, Chi Chun ^a   Lin, Horng Chih ^a   Chang, Chun Yen ^b   Huang, Tiao Yuan ^b   Chien, Chao Hsin ^c   Liang, Mong Song ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; CURRENT DENSITY; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); PLASMA APPLICATIONS; SEMICONDUCTING SILICON; ULTRATHIN FILMS;

CHARGE TO BREAKDOWN VALUE; GATE INJECTION STRESS POLARITY; PLASMA CHARGING; POLYSILICON GATE DOPING; ULTRATHIN GATE OXIDES;

SEMICONDUCTOR DOPING;

EID: 0034140309     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390971     Document Type: Article

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