Efficacy of Ar in reducing the kink effect on floating-body NFD/SOI CMOS

IEEE International SOI Conference

Volumn , Issue , 1998, Pages 155-156

  Chang, D ^a   Veeraraghavan, S ^a   Mendicino, M ^a   Rashed, M ^a   Connelly, D ^a   Jallepalli, S ^a   Candelaria, J ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CMOS INTEGRATED CIRCUITS; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SILICON WAFERS; THRESHOLD VOLTAGE;

FLOATING BODY EFFECTS; KINK EFFECTS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0032306227     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)