Physically-based low-frequency noise model for NFD SOI MOSFET's

IEEE International SOI Conference

Volumn , Issue , 1998, Pages 23-24

  Jin, Wei ^a   Chan, Philip C H ^a   Fung, Samuel K H ^a   Ko, P K ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC IMPEDANCE; SEMICONDUCTOR DEVICE MODELS; SHOT NOISE; SILICON ON INSULATOR TECHNOLOGY; SPECTRUM ANALYSIS;

FLOATING-BODY EFFECTS (FBE);

MOSFET DEVICES;

EID: 0032314370     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)