A versatile, SOI BiCMOS technology with complementary lateral BJT's

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 453-456

  Parke, S ^a   Assaderaghi, F ^a   Chen, Jian ^a   King, J ^a   Hu, Chenming ^a   Ko, P K ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BICMOS TECHNOLOGY; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY;

BI-CMOS PROCESS; DEEP SUB-MICRON; HIGH-PERFORMANCE CIRCUITS; LATERAL CURRENTS; PROCESS SIMPLIFICATION; PROPAGATION DELAYS; RING OSCILLATOR; SHORT CHANNELS;

BISMUTH COMPOUNDS;

EID: 84908167248     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307399     Document Type: Conference Paper

References (6)

1. A. Watanabe, T. Nagano, S. Shukuri, and T. Ikeda, ''Future BiCMOS technology for scaled supply voltage, " 1989 IEDM Technical Digest, pp. 429-432.
2. T. Maeda, K. Ishimaru, and lL Momose, "Lower submicron FCBiMOS (fully complementary BiMOS) process with Rl'P and MeV implanted 5GHz vertical PNP transistor, " 1990 Symposiwn on VLSI Technology, Digest of Technical Papen, pp. 79-80.
3. N. Higaki, T. Fukano, A. Fukuroda, T. Sugii, Y. Arimoto, and T. Ito. "A thin-base lateral bipolar tranSistor fabricated on bonded SOl, " 1991 Symposium on VLSI Technology, Digest of Technical Papers, pp. 53-54.
4. G. G. Shahidi, et al, "A novel high-performance lateral bipolar on SOl. " 1991 IEDM Technical Digest, pp. 663-666.
5. J. P. Colinge, "An SOl voltage-controlled bipolar-MOS device", IEEE Transactions on Electron Devices, Vol. 34, No. 4, Aprill987, pp. 845-849.
6. IL Miki, et al, '"Subfemtojoule deep submicrometer-gate CMOS built in ultra-thin Si film on SIMOX substrates, " IEEE Transactions on Electron Devices, Vol. 38, No. 2, Feb. 1991, pp. 373-377.