Growth of GaN on lithium gallate (LiGaO2) substrates for material integration

Journal of Electronic Materials

Volumn 29, Issue 7, 2000, Pages 894-896

  Brown, April S ^a   Doolittle, W Alan ^a   Kang, Sangbeom ^a   Shen, Jeng Jung ^a   Wang, Z L ^b   Dai, Z ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CRYSTAL LATTICES; DISSIMILAR MATERIALS; LITHIUM COMPOUNDS; RELAXATION PROCESSES; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES; THERMAL STRESS;

BONDING TECHNOLOGY; GALLIUM NITRIDE; LITHIUM GALLATE; MATERIAL INTEGRATION; STRAIN MANAGEMENT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034228997     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0176-3     Document Type: Article

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