Selective wet etchinq of lithium gallate

Journal of the Electrochemical Society

Volumn 145, Issue 5, 1998, Pages

  Kropewnicki, Thomas J ^a,c   Doolittle, W Alan ^b   Carter Coman, Carrie ^b,c   Kang, Sangboem ^b   Kohl, Paul A ^a,c   Jokerst, Nan Marie ^b   Brown, April S ^b  

^a Georgia Institute of Technology   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ETCHING; FILM GROWTH; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SUBSTRATES; THIN FILMS;

GALLIUM NITRIDE; LITHIUM GALLATE; SELECTIVE WET ETCHING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032070283     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838496     Document Type: Article

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