Strain accommodation in mismatched layers by molecular beam epitaxy: Introduction of a new compliant substrate technology

Journal of Electronic Materials

Volumn 25, Issue 7, 1996, Pages 1044-1048

  Carter Coman, C ^a   Brown, A S ^a   Jokerst, N M ^a   Dawson, D E ^a   Bicknell Tassius, R ^a   Feng, Z C ^a   Rajkumar, K C ^a   Dagnall, G ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GROWTH (MATERIALS); KINETIC THEORY; STRAIN; SUBSTRATES; THIN FILMS;

COMPLIANT SUBSTRATES; INDIUM GALLIUM ARSENIDES; MISMATCHED LAYERS; STRAIN MODULATED EPITAXY;

MOLECULAR BEAM EPITAXY;

EID: 0030180952     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02659900     Document Type: Article

References (13)