Abstraction of hydrogen by SiH radicals from hydrogenated amorphous silicon surfaces

Surface Science

Volumn 459, Issue 3, 2000, Pages

  Sriraman, S ^a   Ramalingam, S ^a   Aydil, E S ^a   Maroudas, D ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; COMPUTER SIMULATION; FILM GROWTH; HYDROGEN BONDS; HYDROGENATION; MOLECULAR DYNAMICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANES; SURFACE STRUCTURE; THIN FILMS;

BOND ANGLE; BOND LENGTH; DANGLING BOND; ELEY-RIDEAL REACTION; HYDROGEN ABSTRACTION; HYDROGENATED AMORPHOUS SILICON; SURFACE COORDINATION EFFECT;

SURFACE CHEMISTRY;

EID: 0034227696     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00553-7     Document Type: Article

References (29)

1. Beneking C., Rech B., Foelsch J., Wagner H. Phys. Stat. Solidi B. 194:1996;41.
2. Abelson J.R. Appl. Phys. A. 56:1993;493.
3. Ramalingam S., Maroudas D., Aydil E.S. J. Appl. Phys. 84:1998;3895.
4. Ramalingam S., Maroudas D., Aydil E.S. Appl. Phys. Lett. 72:1998;578.
5. Ramalingam S., Maroudas D., Aydil E.S. J. Appl. Phys. 86:1999;2872.
6. Ramalingam S., Maroudas D., Aydil E.S. IEEE Trans. Plasma Sci. 27:1999;104.
7. Ramalingam S., Mahalingam P., Aydil E.S., Maroudas D. J. Appl. Phys. 86:1999;5497.
8. S. Ramalingam, E.S Aydil, D. Maroudas, J. Vac. Sci. Technol. (in preparation).
9. S. Ramalingam, Ph.D. Thesis, University of California, Santa Barbara (2000).
10. Tachibana K., Mukai T., Harima H. Jpn. J. Appl. Phys. 30:1991;L1208.
11. Yamamato Y., Nomura H., Tanaka T., Hiramatsu M., Hori M., Goto T. Jpn. J. Appl. Phys. 33:1994;4320.
12. Ho P., Breiland G., Buss R.J. J. Chem. Phys. 91:1989;2627.
13. Robertson R., Gallagher A. J. Appl. Phys. 59:1986;3402.
14. Veprek S., Heintze M. Plasma Chem. Plasma Proc. 10:1990;3.
15. Matsuda A. J. Vac. Sci. Technol. A. 16:1998;365.
16. Gallagher A. J. Appl. Phys. 63:1998;2406.
17. Perrin J. J. Non-Cryst. Solids. 137:1991;138-639.
18. Ramalingam S., Maroudas D., Aydil E.S., Walch S.P. Surf. Sci. 418:1998;L8.
19. Tersoff J. Phys. Rev. Lett. 56:1986;632.
20. Tersoff J. Phys. Rev. B. 37:1988;6991.
21. Tersoff J. Phys. Rev. B. 38:1988;9902.
22. Tersoff J. Phys. Rev. B. 39:1989;5566.
23. Ohira T., Ukai O., Adachi T., Takeyuchi Y., Murata M. Phys. Rev. B. 52:1995;8283.
24. Ohira T., Ukai O., Noda M., Takeyuchi Y., Murata M., Yoshida H. Mater. Res. Soc. Symp. Proc. 408:1996;445.
25. Widdra W., Yi S.I., Maboudian R., Briggs G.A.D., Weinberg W.H. Phys. Rev. Lett. 74:1995;2074.
26. Chiang C.M., Gates S.M., Lee S.S., Kong L.M., Bent S.F. J. Phys. Chem. B. 101:1997;9537.
27. Otobe M., Oda S. J. Non-Cryst. Solids. 164:1993;166-993.
28. Boland J.J., Parsons G.N. Science. 256:1992;1304.
29. S. Sriraman, S. Ramalingam, E.S Aydil, D. Maroudas, J. Vac. Sci. Technol. (in preparation).