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Volumn 63, Issue 7, 1988, Pages 2406-2413

Neutral radical deposition from silane discharges

Author keywords

[No Author keywords available]

Indexed keywords


EID: 36549102473     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.341034     Document Type: Article
Times cited : (151)

References (34)
  • 1
    • 84950775820 scopus 로고    scopus 로고
    • Amorphous Silicon Solar Cells, SERI/PR-0-9372-1, RCA Quarterly Report No. 1, Oct. 1, 1980 to Dec. 31, 1980.
    • Carlson, D.E.1
  • 2
    • 84950850021 scopus 로고    scopus 로고
    • Diagnostics of a Glow Discharge Used to Produce a-SiH Films, SERI/PR-2-02189-1, Univ. of Colorado Report, April 15, 1981 to April 14, 1982.
    • Gallagher, A.1    Scott, J.2
  • 9
    • 84950769000 scopus 로고    scopus 로고
    • The enthalpy differences of various [formula omitted] dissociation products are: [formula omitted]
  • 25
    • 84950759798 scopus 로고    scopus 로고
    • Diagnostics of a Glow Discharge used to Produce a-Si:H Films, Final Subcontract Report 15 April 1984 to 14 April 1985 (SERI/STR-211-2760, DE85016847).
    • Gallagher, A.1    Scott, J.2
  • 30
    • 84950796085 scopus 로고    scopus 로고
    • Since most [formula omitted] is produced by reaction (Rl) following H diffusion over major distances, the correct I(x) for [formula omitted] is more diffuse than initial dissociation I(x) shown in Figs. 1 and 3. {The H diffusion-reaction distance is [formula omitted] from measured [Refs. 25(b), 25(c)] [formula omitted] and aniassumed [formula omitted]} However, this difference has a minor effept on [formula omitted] reactions, since the important parameter in this case is the average distance between the source and substrate, not the exact shape of the source.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.