Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high-resolution X-ray diffraction and grazing incidence diffraction

Journal of Physics D: Applied Physics

Volumn 32, Issue 10 A, 1999, Pages

  Zhuang, Y ^a   Holy V ^a,c   Stangl, J ^a   Darhuber, A A ^a   Mikulik, P ^a   Zerlauth, S ^a   Schaffler, F ^a   Bauer, G ^a   Darowski, N ^b   Lubbert D ^b,d   Pietsch, U ^b  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b UNIVERSITY OF POTSDAM   (Germany)

^c MASARYK UNIVERSITY   (Czech Republic)

^d FRAUNHOFER INSTITUTE FOR NON DESTRUCTIVE TESTING   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FINITE ELEMENT METHOD; INTERFACES (MATERIALS); KINEMATICS; MOLECULAR BEAM EPITAXY; MULTILAYERS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; STRAIN; STRESS RELAXATION; SURFACE ROUGHNESS; X RAY DIFFRACTION;

GRAZING INCIDENCE DIFFRACTION; HIGH RESOLUTION X RAY DIFFRACTION; INTERFACE ROUGHNESS; KINEMATICALLY DIFFRACTION THEORY; STRAIN DISTRIBUTION; STRAIN RELAXATION;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0032677906     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/10A/344     Document Type: Article

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