Selective growth condition in disilane gas source silicon molecular beam epitaxy

Applied Physics Letters

Volumn 52, Issue 26, 1988, Pages 2242-2243

  Hirayama, Hiroyuki ^a   Tatsumi, Toru ^a   Aizaki, Naoaki ^a  

^a NEC CORPORATION   (Japan)

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EID: 36549101448     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.99654     Document Type: Article

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