SCOPUS 정보 검색 플랫폼

Volumn 167, Issue 3-4, 1996, Pages 508-515

The growth of nanometer Si/SiGe/Si quantum well wires with local molecular beam epitaxy in dependence on the shadow mask geometry

(7) Kim, Myeongcheol a Osten, H J a Wolff, A a Quick, C a Zeindl, H P a Klatt, J a Knoll, D a

a IHP (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; LITHOGRAPHY; MASKS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ADATOMS; MASK GEOMETRY; SHADOW MASKS; SPACER TECHNOLOGY;

EPITAXIAL GROWTH;

EID: 0030259143 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(96)00255-2 Document Type: Article

Times cited : (4)

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